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Laser Diodes
 

The 635nm ± 3nm, 400mW

PLT Technology Inc., features the 635nm ± 2nm high power laser diode. [150 um stripe, 400mW at room temperature on C-mount]

Fiber lensing available.

Fast Access Collimation (FAC)

Before After

 

SAMPLE RAW TEST DATA
Current (A) Power (W) Voltage (V) Wavelength (nm)
0.005 0.000 1.815 0.000
0.208 0.002 1.961 668.700
0.410 0.005 2.007 658.200
0.608 0.013 2.041 645.500
0.810 0.135 2.068 634.400
1.012 0.298 2.092 634.100
1.215 0.448 2.117 634.300

For more information call, fax or e-mail your request to:

 

PLT TECHNOLOGY, Inc.

Manufacturers  of  Quality  High  Power  Semiconductor  Lasers

Phone: 805.962.1266
Fax: 805.962.1713

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Santa Barbara, California 93101 USA
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